transistors 1 publication date: march 2003 sjc00119bed 2sc2634 silicon npn epitaxial planar type for low-frequency and low-noise amplification complementary to 2sa1127 features ? low noise voltage nv ? high forward current transfer ratio h fe absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 55 v emitter-base voltage (collector open) v ebo 7v collector current i c 100 ma peak collector current i cp 200 ma collector power dissipation p c 400 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 060v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 055v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 07v base-emitter voltage v be v ce = 1 v, i c = 30 ma 1 v collector-base cutoff current (emitter open) i cbo v cb = 10 v, i e = 0 1 100 na collector-emitter cutoffcurrent (base open) i ceo v ce = 10 v, i b = 0 0.01 1.00 a forward current transfer ratio * h fe v ce = 5 v, i c = 2 ma 180 700 ? collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.6 v transition frequency f t v cb = 5 v, i e = ? 2 ma, f = 200 mhz 200 mhz noise voltage nv v ce = 10 v, i c = 1 ma, g v = 80 db 150 mv r g = 100 k ? , function = flat electrical characteristics t a = 25 c 3 c 5.0 0.2 0.7 0.1 0.45 +0.15 ?0.1 2.5 +0.6 ?0.2 0.45 +0.15 ?0.1 2.5 123 +0.6 ?0.2 4.0 0.2 5.1 0.2 12.9 0.5 2.3 0.2 0.7 0.2 unit: mm 1: emitter 2: collector 3: base eiaj: sc-43a to-92-b1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r s t h fe 180 to 360 260 to 520 360 to 700 this product complies with the rohs directive (eu 2002/95/ec). maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
2sc2634 2 sjc00119bed v ce(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce i c ? v be c ob ? v cb nf ? i e nv ? i c 0 200 160 40 120 80 0 500 400 300 200 100 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 012 10 8 26 4 0 120 100 80 60 40 20 t a = 25 c 250 a 200 a 350 a 300 a 150 a 100 a 50 a i b = 400 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 5 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 1 000 800 600 400 200 v ce = 5 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 1 ? 10 ? 100 0 400 300 100 200 v cb = 5 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 1 10 100 0 10 8 6 4 2 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) ? 10 ? 100 ? 1 000 0 8 6 2 4 v ce = 5 v r g = 1 k ? t a = 25 c f = 100 hz 10 khz 1 khz noise figure nf ( db ) emitter current i e ( a ) 0.01 0.1 1 0 120 100 80 60 40 20 v ce = 10 v g v = 80 db function = flat 5 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector current i c ( ma ) this product complies with the rohs directive (eu 2002/95/ec).
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